Part Number | SI7949DP-T1-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Texas Instruments |
Description | MOSFET 2P-CH 60V 3.2A PPAK SO-8 |
Series | TrenchFET |
Packaging | |
FET Type | 2 P-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 3.2A |
Rds On (Max) @ Id, Vgs | 64 mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 40nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Power - Max | 1.5W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | PowerPAK SO-8 Dual |
Supplier Device Package | PowerPAK SO-8 Dual |
Image |
SI7949DP-T1-E3
TI/ST
9963
0.11
HK HEQING ELECTRONICS LIMITED
Si7949DP-T1-E3
TexasIns
9062
1.53
Shenzhen WTX Capacitor Co., Ltd.
SI7949DP-T1-E3
TI/CC
559
2.95
E-star Trading Enterprise Limited
SI7949DP-T1-E3
TI?
2132
4.37
Yingxinyuan INT'L (Group) Limited
SI7949DP-T1-E3
TI-BB
4246
5.79
Cicotex Electronics (HK) Limited