Part Number | SI8472DB-T2-E1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET N-CH 20V 3.3A MICRO |
Series | TrenchFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | - |
Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
Vgs(th) (Max) @ Id | 900mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 18nC @ 8V |
Input Capacitance (Ciss) (Max) @ Vds | 630pF @ 10V |
Vgs (Max) | ±8V |
FET Feature | - |
Power Dissipation (Max) | 780mW (Ta), 1.8W (Tc) |
Rds On (Max) @ Id, Vgs | 44 mOhm @ 1.5A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 4-Micro Foot (1x1) |
Package / Case | 4-UFBGA |
Image |
SI8472DB-T2-E1
TI/ST
8880
1.64
HK HEQING ELECTRONICS LIMITED
SI8472DB-T2-E1
TexasIns
397
2.08
Ysx Tech Co., Limited
SI8472DB-T2-E1
TI/CC
2884
2.52
Shenzhen WTX Capacitor Co., Ltd.
SI8472DB-T2-E1
TI?
6761
2.96
CIS Ltd (CHECK IC SOLUTION LIMITED)
SI8472DB-T2-E1
TI-BB
5056
3.4
Gallop Great Holdings (Hong Kong) Limited