Part Number | SI8810EDB-T2-E1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET N-CH 20V 2.1A MICROFOOT |
Series | TrenchFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | - |
Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
Vgs(th) (Max) @ Id | 900mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 8nC @ 8V |
Input Capacitance (Ciss) (Max) @ Vds | 245pF @ 10V |
Vgs (Max) | ±8V |
FET Feature | - |
Power Dissipation (Max) | 500mW (Ta) |
Rds On (Max) @ Id, Vgs | 72 mOhm @ 1A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 4-Microfoot |
Package / Case | 4-XFBGA |
Image |
SI8810EDB-T2-E1
TI/ST
2735
1
Shenzhen Chuangxinda Electronic-Tech Co.,Ltd
SI8810EDB-T2-E1
TexasIns
1350
1.9275
SEMICON INTERNATIONAL (HONG KONG) CO., LIMITED
SI8810EDB-T2-E1
TI/CC
2965
2.855
MY Group (Asia) Limited
SI8810EDB-T2-E1
TI?
7601
3.7825
SINOCHIP (HK) Electronics Co., Limited
SI8810EDB-T2-E1
TI-BB
9187
4.71
ShenZhen XinChi TianCheng Technology Co,.Ltd