Description
MOSFET 2N-CH 20V 3.9A 6-MFP Series: TrenchFET? FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25~C: 3.9A Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 1V @ 980米A Gate Charge (Qg) @ Vgs: - Input Capacitance (Ciss) @ Vds: - Power - Max: 1W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 6-MICRO FOOT?CSP Supplier Device Package: 6-Micro Foot?
Part Number | SI8902EDB-T2-E1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Texas Instruments |
Description | MOSFET 2N-CH 20V 3.9A 6-MFP |
Series | TrenchFET |
Packaging | Tape & Reel (TR) |
FET Type | 2 N-Channel (Dual) Common Drain |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 3.9A |
Rds On (Max) @ Id, Vgs | - |
Vgs(th) (Max) @ Id | 1V @ 980µA |
Gate Charge (Qg) (Max) @ Vgs | - |
Input Capacitance (Ciss) (Max) @ Vds | - |
Power - Max | 1W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 6-MICRO FOOTCSP |
Supplier Device Package | 6-Micro Foot |
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SI8902EDB-T2-E1
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3000
1.08
HK HEQING ELECTRONICS LIMITED
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TexasIns
429696
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Cicotex Electronics (HK) Limited
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TI/CC
10000
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Hong Kong Capital Industrial Co.,Ltd
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50000
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Yuhua Technology Co.,Limited
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TI-BB
1999
4.99
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