Part Number | SIA923EDJ-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Texas Instruments |
Description | MOSFET 2P-CH 20V 4.5A SC-70-6 |
Series | TrenchFET |
Packaging | Cut Tape (CT) |
FET Type | 2 P-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 4.5A |
Rds On (Max) @ Id, Vgs | 54 mOhm @ 3.8A, 4.5V |
Vgs(th) (Max) @ Id | 1.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 25nC @ 8V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Power - Max | 7.8W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | PowerPAK SC-70-6 Dual |
Supplier Device Package | PowerPAK SC-70-6 Dual |
Image |
SiA923EDJ-T1-GE3
TI/ST
8757
1.25
Hongkong Shengshi Electronics Limited
SIA923EDJ-T1-GE3
TexasIns
3859
2.275
HK HEQING ELECTRONICS LIMITED
SIA923EDJ-T1-GE3
TI/CC
3017
3.3
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
SIA923EDJ-T1-GE3
TI?
4504
4.325
King-Pai Technology (HK) Co.,Limited
SIA923EDJ-T1-GE3
TI-BB
7496
5.35
Gallop Great Holdings (Hong Kong) Limited