Part Number | SIHG20N50C-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET N-CH 500V 20A TO247 |
Series | - |
Packaging | Bulk |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 76nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2942pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 250W (Tc) |
Rds On (Max) @ Id, Vgs | 270 mOhm @ 10A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247AC |
Package / Case | TO-247-3 |
Image |
Hot Offer
SIHG20N50C-E3
TI/ST
20159
0.58
DINGSEN ELECTRONICS TECHNOLOGY CO., LIMITED
SIHG20N50C-E3
TexasIns
2178
1.3875
Shenzhen Xincheng Jirui Electronic Technology Co., Ltd.
SIHG20N50C-E3
TI/CC
10000
2.195
Y.H.X ELECTRONIC TECHNOLOGY HK LIMITED
SIHG20N50C-E3
TI?
38307
3.0025
SEHOT CO., LIMITED
SIHG20N50C-E3
TI-BB
1000
3.81
HEXING TECHNOLOGY (HK) LIMITED