Part Number | SIRA52DP-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET N-CH 40V 60A PPAK SO-8 |
Series | TrenchFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 150nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 7150pF @ 20V |
Vgs (Max) | +20V, -16V |
FET Feature | - |
Power Dissipation (Max) | 48W (Tc) |
Rds On (Max) @ Id, Vgs | 1.7 mOhm @ 15A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK SO-8 |
Package / Case | PowerPAK SO-8 |
Image |
Hot Offer
SIRA52DP-T1-GE3
TI-BB
54000
5.95
Shenzhen Mannyshield Technology Co., Ltd.
SIRA52DP-T1-GE3
TI/ST
900
1.05
MY Group (Asia) Limited
SIRA52DP-T1-GE3
TexasIns
2800
2.275
HK HEQING ELECTRONICS LIMITED
SIRA52DP-T1-GE3
TI/CC
2509
3.5
Dan-Mar Components Inc.
SIRA52DP-T1-GE3
TI?
2800
4.725
Riking Technology (HK) Co., Limited