Description
MOSFET P-CH 30V 18A PPAK 1212-8 Series: TrenchFET? Amplifier Type: Surface Mount Applications: PowerPAK? 1212-8 Capacitance: PowerPAK? 1212-8 Connector Type: Function: Logic Type: Number of Channels: Proto Board Type: Resistance (Ohms): Voltage - Off State: Circuit:
Part Number | SIS413DN-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET P-CH 30V 18A PPAK 1212-8 |
Series | TrenchFET |
Packaging | Tape & Reel (TR) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 110nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 4280pF @ 15V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 3.7W (Ta), 52W (Tc) |
Rds On (Max) @ Id, Vgs | 9.4 mOhm @ 15A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK 1212-8 |
Package / Case | PowerPAK 1212-8 |
Image |
Hot Offer
SIS413DN-T1-GE3
TI-BB
33000
3.61
Hong Kong Brocade Technology Limited
SiS413DN-T1-GE3
TI/ST
3000
0.44
HK HEQING ELECTRONICS LIMITED
SIS413DN-T1-GE3
TexasIns
4800
1.2325
Gallop Great Holdings (Hong Kong) Limited
SIS413DN-T1-GE3
TI/CC
10000
2.025
Xiefeng (HK) INT'L Electronics Limited
SIS413DNT1GE3
TI?
50100
2.8175
FLOWER GROUP(HK)CO.,LTD