Part Number | SISS27DNT1GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET P-CH 30V 50A PPAK 1212-8S |
Series | TrenchFET |
Packaging | Tape & Reel (TR) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 140nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 5250pF @ 15V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 4.8W (Ta), 57W (Tc) |
Rds On (Max) @ Id, Vgs | 5.6 mOhm @ 15A, 10V |
Operating Temperature | -50°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK 1212-8S (3.3x3.3) |
Package / Case | 8-PowerVDFN |
Image |
SISS27DN-T1-GE3
TI/ST
45
0.96
Gallop Great Holdings (Hong Kong) Limited
SISS27DNT1GE3
TexasIns
15200
1.965
FLOWER GROUP(HK)CO.,LTD
SISS27DN-T1-GE3
TI/CC
180
2.97
SUNTOP SEMICONDUCTOR CO., LIMITED
SISS27DN-T1-GE3
TI?
11001
3.975
N&S Electronic Co., Limited
SISS27DN-T1-GE3
TI-BB
50000
4.98
Yingxinyuan INT'L (Group) Limited