Part Number | SPD09P06PL |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET P-CH 60V 9.7A TO252-3 |
Series | SIPMOS |
Packaging | Tape & Reel (TR) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 9.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 21nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 450pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 42W (Tc) |
Rds On (Max) @ Id, Vgs | 250 mOhm @ 6.8A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO252-3 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
SPD09P06PL G
TI/ST
8481
1.38
CHENGWING INTERNATIONAL LIMITED
SPD09P06PL
TexasIns
5773
2.5425
HK FEILIDI ELECTRONIC CO., LIMITED
SPD09P06PL
TI/CC
3928
3.705
Ande Electronics Co., Limited
SPD09P06PL GS
TI?
1616
4.8675
N&S Electronic Co., Limited
SPD09P06PL
TI-BB
6723
6.03
N&S Electronic Co., Limited