(4/5) based on 18 customer reviews
Description
Feb 11, 2008 SPW47N60C3 . Cool MOS Power Transistor. VDS @ Tjmax. 650. V. RDS(on). 0.07. . ID. 47. A. Feature. New revolutionary high voltage IPP60R160C6 SPA24N60C3 IPA60R160C6. SPW24N60C3 IPW60R160C6. 0.10 . SPW35N60C3 IPW60R099C6. 0.07 . SPW47N60C3 IPW60R070C6 The world is evolving into a place of always-on interconnectivity demanding reliable, high performance and energy efficient solutions. Tiny, barely visible. Jan 17, 2008 SPW47N60C3 . SKW30N60HS. IGBT: Soft--- Low EMI. Low Switching . All rights reserved. Temperature stable. SPW47N60C3 . 266%. 125%. SPW47N60C3 . Issued. 24. December 2015. MA#. MA000976116. Package. PG- TO247-3-44. Weight*. 6067.84 mg. Construction Element. Material Group.
| Part Number | SPW47N60C3 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Texas Instruments |
| Description | MOSFET N-CH 650V 47A TO-247 |
| Series | CoolMOS |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 47A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 3.9V @ 2.7mA |
| Gate Charge (Qg) (Max) @ Vgs | 320nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 6800pF @ 25V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 415W (Tc) |
| Rds On (Max) @ Id, Vgs | 70 mOhm @ 30A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO247-3 |
| Package / Case | TO-247-3 |
| Image |  |
Hot Offer
SPW47N60C3
TI/ST
11000
1.53
CIS Ltd (CHECK IC SOLUTION LIMITED)
SPW47N60C3
TexasIns
4000
2.7125
ALLCHIPS ELECTRONICS LIMITED
SPW47N60C3
TI/CC
4560
3.895
HEXING TECHNOLOGY (HK) LIMITED
SPW47N60C3
TI?
14060
5.0775
ANCHIP TECHNOLOGY CO., LIMITED
SPW47N60C3
TI-BB
25769
6.26
ZHUOYUEHENGSHENG ELECTRONICS (HK) LIMITED
