Description
MOSFET 2N-CH 60V 8A 8SO Series: TrenchFET? FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25~C: 8A Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250米A Gate Charge (Qg) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) @ Vds: 475pF @ 25V Power - Max: 25W Operating Temperature: -55~C ~ 175~C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual
Part Number | SQJ962EP-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Texas Instruments |
Description | MOSFET 2N-CH 60V 8A 8SO |
Series | Automotive, AEC-Q101, TrenchFET |
Packaging | Tape & Reel (TR) |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 8A |
Rds On (Max) @ Id, Vgs | 60 mOhm @ 4.3A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 14nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 475pF @ 25V |
Power - Max | 25W |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | PowerPAK SO-8 Dual |
Supplier Device Package | PowerPAK SO-8 Dual |
Image |
SQJ962EP-T1-GE3
TI/ST
2741
0.27
Gallop Great Holdings (Hong Kong) Limited
SQJ962EP-T1-GE3
TexasIns
55300
1.53
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
SQJ962EP-T1-GE3
TI/CC
2741
2.79
MAXTRONIC GLOBAL LIMITED
SQJ962EP-T1-GE3
TI?
25241
4.05
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
SQJ962EP-T1-GE3
TI-BB
16777
5.31
NEW IDEAS INDUSTRIAL CO., LIMITED