Part Number | STB28NM50N |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET N-CH 500V 21A D2PAK |
Series | MDmesh,II |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 50nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1735pF @ 25V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 150W (Tc) |
Rds On (Max) @ Id, Vgs | 158 mOhm @ 10.5A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D2PAK |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
STB28NM50N
TI/ST
6703
1.44
Sunton Electronics Co., Limited
STB28NM50N
TexasIns
3060
2.635
HK HEQING ELECTRONICS LIMITED
STB28NM50N
TI/CC
6497
3.83
HK XINYI COMPONENTS ASIA CO., LIMITED
STB28NM50N
TI?
716
5.025
FLOWER GROUP(HK)CO.,LTD
STB28NM50N
TI-BB
8804
6.22
NEW IDEAS INDUSTRIAL CO., LIMITED