Part Number | STB35N60DM2 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET N-CH 600V 28A |
Series | MDmesh,DM2 |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 28A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 54nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2400pF @ 100V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 210W (Tc) |
Rds On (Max) @ Id, Vgs | 110 mOhm @ 14A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D2PAK |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
STB35N60DM2
TI/ST
5233
0.25
HK HEQING ELECTRONICS LIMITED
STB35N60DM2
TexasIns
20000
1.2325
HK XINYI COMPONENTS ASIA CO., LIMITED
STB35N60DM2
TI/CC
2000
2.215
Corich International Ltd.
STB35N60DM2
TI?
37000
3.1975
CIS Ltd (CHECK IC SOLUTION LIMITED)
STB35N60DM2
TI-BB
26233
4.18
N&S Electronic Co., Limited