Part Number | STD10P10F6 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET P-CH 100V 10A |
Series | STripFET,F6 |
Packaging | Cut Tape (CT) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 16.5nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 864pF @ 80V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 40W (Tc) |
Rds On (Max) @ Id, Vgs | 180 mOhm @ 5A, 10V |
Operating Temperature | 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DPAK |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
STD10P10F6
TI/ST
1610
0.87
HK HEQING ELECTRONICS LIMITED
STD10P10F6
TexasIns
5000000
1.99
Hongkong Shengshi Electronics Limited
STD10P10F6
TI/CC
50000
3.11
Corechips Co., Limited
STD10P10F6
TI?
1564
4.23
NEW IDEAS INDUSTRIAL CO., LIMITED
STD10P10F6
TI-BB
6339
5.35
Light International Technology CO., Limited