Part Number | STD11N60DM2 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | N-CHANNEL 600 V, 0.26 OHM TYP., |
Series | MDmesh |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 16.5nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 614pF @ 100V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 110W (Tc) |
Rds On (Max) @ Id, Vgs | 420 mOhm @ 5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DPAK |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
STD11N60DM2
TI/ST
5000000
1.32
Hongkong Shengshi Electronics Limited
STD11N60DM2
TexasIns
100000
2.21
VBsemi Electronics Co., Limited
STD11N60DM2
TI/CC
2500
3.1
Corich International Ltd.
STD11N60DM2
TI?
25468
3.99
N&S Electronic Co., Limited
STD11N60DM2
TI-BB
371000
4.88
N&S Electronic Co., Limited