Part Number | STFH24N60M2 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | N-CHANNEL 600 V, 0.168 OHM TYP., |
Series | MDmesh,M2 |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 18A |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 29nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1060pF @ 100V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 35W (Tc) |
Rds On (Max) @ Id, Vgs | 190 mOhm @ 9A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | - |
Package / Case | 3-SIP |
Image |
STFH24N60M2
TI/ST
2755
1.28
MY Group (Asia) Limited
STFH24N60M2
TexasIns
4539
2.515
RX ELECTRONICS LIMITED
STFH24N60M2
TI/CC
3455
3.75
STH Electronics Co.,Ltd
STFH24N60M2
TI?
5667
4.985
Yingxinyuan INT'L (Group) Limited
STFH24N60M2
TI-BB
6483
6.22
HK XINYI COMPONENTS ASIA CO., LIMITED