Rated 
(4/5) based on 3 customer reviews
(4/5) based on 3 customer reviews
| Part Number | STH315N10F7-2 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Texas Instruments |
| Description | MOSFET N-CH 100V 180A H2PAK-2 |
| Series | DeepGATE, STripFET,VII |
| Packaging | Cut Tape (CT) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 180nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 12800pF @ 25V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 315W (Tc) |
| Rds On (Max) @ Id, Vgs | 2.3 mOhm @ 60A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | H²ÂPAK |
| Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab) Variant |
| Image |  |
Lowest Price: $0.67
Highest Price: $3.95
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USEMI LIMITED
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