Part Number | STI33N60M2 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET N-CH 600V 26A I2PAK |
Series | MDmesh,II Plus |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 26A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 45.5nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1781pF @ 100V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 190W (Tc) |
Rds On (Max) @ Id, Vgs | 125 mOhm @ 13A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I2PAK (TO-262) |
Package / Case | TO-262-3 Long Leads, I²ÂPak, TO-262AA |
Image |
STI33N60M2
TI/ST
9472
1.47
HK HEQING ELECTRONICS LIMITED
STI33N60M2
TexasIns
479
2.43
HK XINYI COMPONENTS ASIA CO., LIMITED
STI33N60M2
TI/CC
6971
3.39
Gallop Great Holdings (Hong Kong) Limited
STI33N60M2
TI?
1307
4.35
E-Core Electronics Co.
STI33N60M2
TI-BB
997
5.31
NEW IDEAS INDUSTRIAL CO., LIMITED