Part Number | STL10N65M2 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET N-CH 650V POWERFLAT 5X6 H |
Series | - |
Packaging | - |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 46nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 315pF @ 100V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 48W (Tc) |
Rds On (Max) @ Id, Vgs | 1 Ohm @ 2.5A, 10V |
Operating Temperature | -55°C ~ 150°C (TA) |
Mounting Type | Surface Mount |
Supplier Device Package | - |
Package / Case | - |
Image |
STL10N65M2
TI/ST
9000
0.67
Fairstock HK Limited
STL10N65M2
TexasIns
54000
1.8675
AMAX ELECTRONIC TECHNOLOGY PTE.LTD.
STL10N65M2
TI/CC
300
3.065
Gallop Great Holdings (Hong Kong) Limited
STL10N65M2
TI?
3000
4.2625
HUA CHENG (H.K.) ELECTRONICS LIMITED
STL10N65M2
TI-BB
2600
5.46
GOTSSON TECHNOLOGY (HONG KONG) CO., LIMITED