Part Number | STP11NM60N |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET N-CH 600V 10A TO-220 |
Series | MDmesh,II |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 31nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 850pF @ 50V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 90W (Tc) |
Rds On (Max) @ Id, Vgs | 450 mOhm @ 5A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Image |
STP11NM60N
TI/ST
20000
0.53
HK XINYI COMPONENTS ASIA CO., LIMITED
STP11NM60N
TexasIns
6000
1.69
Bonase Electronics (HK) Co., Limited
STP11NM60N
TI/CC
2000
2.85
Belt (HK) Electronics Co
STP11NM60N
TI?
74893
4.01
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
STP11NM60N
TI-BB
37584
5.17
N&S Electronic Co., Limited