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Description
STW28N60DM2 . N-channel 600 V, 0.13 typ., 21 A MDmesh DM2. Power MOSFETs in D PAK, TO-220 and TO-247 packages. Datasheet - production data. Jan 4, 2016 Mfr Site. Date. STW28N60DM2 . TSLW*FQ66B62. A. SHENZHEN B/E. 2016-01- 04. Amount. UoM. Unit type. ST ECOPACK Grade. 4430.00 mg.
Part Number | STW28N60DM2 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET N-CH 600V 21A |
Series | MDmesh,DM2 |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 34nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1500pF @ 100V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 170W (Tc) |
Rds On (Max) @ Id, Vgs | 160 mOhm @ 10.5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247 |
Package / Case | TO-247-3 |
Image | ![]() |
STW28N60DM2
TI/ST
20000
1.31
HK XINYI COMPONENTS ASIA CO., LIMITED
STW28N60DM2
TexasIns
1000
2.665
STH Electronics Co.,Ltd
STW28N60DM2
TI/CC
11577
4.02
CIS Ltd (CHECK IC SOLUTION LIMITED)
STW28N60DM2
TI?
6000
5.375
SUMMER TECH(HK) LIMITED
STW28N60DM2
TI-BB
22659
6.73
N&S Electronic Co., Limited