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Description
STW35N60DM2 . N-channel 600 V, 0.094 typ., 28 A MDmesh DM2. Power MOSFET in a TO-247 package. Datasheet - production data. Figure 1: Internal Aug 30, 2016 Mfr Site. Date. STW35N60DM2 . TSLW*FQ6KB62. A. SHENZHEN B/E. 2016-08- 30. Amount. UoM. Unit type. ST ECOPACK Grade. 4430.00 mg. Jul 7, 2016 power stage is based on MDmesh DM2 Power MOSFETs STW35N60DM2 Additionally, the DC-DC converter is provided with an active clamp STW35N60DM2 . 600V, 36A. MDmesh DM2 Power MOSFET. TO-247. ST. STW35N60DM2 . 102. Isolation sheet. Green sheet. High Flow 300P. Isolation mosfet Jul 14, 2016 STW35N60DM2 . Since the behavior of the converter is not symmetric for leading and lagging legs, different considerations to achieve ZVS are
| Part Number | STW35N60DM2 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Texas Instruments |
| Description | MOSFET N-CH 600V 28A |
| Series | MDmesh,DM2 |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 28A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 54nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400pF @ 100V |
| Vgs (Max) | ±25V |
| FET Feature | - |
| Power Dissipation (Max) | 210W (Tc) |
| Rds On (Max) @ Id, Vgs | 110 mOhm @ 14A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247 |
| Package / Case | TO-247-3 |
| Image |  |
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