Description
November 2014. DocID026447 Rev 2. 1/13. This is information on a product in full production. www.st.com. STW40N95K5 . N-channel 950 V, 0.110 typ., 38 A MDmesh K5. Power MOSFET in a TO-247 package. Datasheet - production data. Figure 1: Internal schematic diagram. Features. Order code. VDS. RDS(on) max. Jan 16, 2015 Terminal Base Alloy. Comment. Not Applicable ; if coating is used or other bulk Tin (Sn), matte. Copper Alloy. Package Designator. Size. Nbr of instances. Shape . SIP. 15.75X20.15X5.15. 3. Through-hole. Comment. Product. Manufacturing information. Package: TO 247; MDF valid for STW40N95K5
Part Number | STW40N95K5 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET N-CH 950V 38A TO247 |
Series | MDmesh,K5 |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 950V |
Current - Continuous Drain (Id) @ 25°C | 38A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | 93nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3300pF @ 100V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 450W (Tc) |
Rds On (Max) @ Id, Vgs | 130 mOhm @ 19A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247 |
Package / Case | TO-247-3 |
Image |
Hot Offer
STW40N95K5
TI-BB
6000
2.4
ZS International Electronics Co., Limited
STW40N95K5
TI/ST
3500
0.25
HK Core Group Electronics Limited
STW40N95K5
TexasIns
2200
0.7875
YUFO ELECTRONICS LIMITED
STW40N95K5
TI/CC
510
1.325
Corich International Ltd.
STW40N95K5
TI?
9652
1.8625
Shenzhen CXT Technology Limited.