(5/5) based on 4 customer reviews
Description
MOSFET 6N/6P-CH 200V 56VQFN Series: - FET Type: 6 N and 6 P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25～C: - Rds On (Max) @ Id, Vgs: 8 Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) @ Vgs: - Input Capacitance (Ciss) @ Vds: 50pF @ 25V Power - Max: - Operating Temperature: -55～C ~ 150～C (TJ) Mounting Type: Surface Mount Package / Case: 56-VFQFN Exposed Pad Supplier Device Package: 56-QFN (8x8)
| Part Number | TC8020K6-G |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Arrays |
| Brand | Texas Instruments |
| Description | MOSFET 6N/6P-CH 200V 56VQFN |
| Series | - |
| Packaging | Tray |
| FET Type | 6 N and 6 P-Channel |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | - |
| Rds On (Max) @ Id, Vgs | 8 Ohm @ 1A, 10V |
| Vgs(th) (Max) @ Id | 2.4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 25V |
| Power - Max | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 56-VFQFN Exposed Pad |
| Supplier Device Package | 56-QFN (8x8) |
| Image |  |
TC8020K6-G
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21600
1.76
DINGSEN ELECTRONICS TECHNOLOGY CO., LIMITED
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Golden electronics(hk) limited
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MY Group (Asia) Limited
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10612
3.1025
HongKong Preface Co., Limited
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3.55
Hong Kong Shunyida Technology Limited
