Description
MOSFET 2N/2P-CH 200V 12VDFN Series: - FET Type: 2 N and 2 P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25~C: - Rds On (Max) @ Id, Vgs: 6 Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) @ Vgs: - Input Capacitance (Ciss) @ Vds: 56pF @ 25V Power - Max: - Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 12-VFDFN Exposed Pad Supplier Device Package: 12-DFN (4x4)
Part Number | TC8220K6-G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Texas Instruments |
Description | MOSFET 2N/2P-CH 200V 12VDFN |
Series | - |
Packaging | Tape & Reel (TR) |
FET Type | 2 N and 2 P-Channel |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | - |
Rds On (Max) @ Id, Vgs | 6 Ohm @ 1A, 10V |
Vgs(th) (Max) @ Id | 2.4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | - |
Input Capacitance (Ciss) (Max) @ Vds | 56pF @ 25V |
Power - Max | - |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 12-VFDFN Exposed Pad |
Supplier Device Package | 12-DFN (4x4) |
Image |
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TC8220K6-G
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