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Description
DATASHEET TIP107 . COMPLEMENTARY SILICON POWER. DARLINGTON TRANSISTORS s. STMicroelectronics PREFERRED. SALESTYPES s. COMPLEMENTARY PNP TIP105 / TIP107 . PNP Epitaxial Silicon Darlington Transistor. Features. Monolithic Construction with Built-in Base-Emitter. Shunt Resistors. High DC Current VCEO(sus) = 60 Vdc (Min) TIP100, TIP105. = 80 Vdc (Min) TIP101, TIP106. = 100 Vdc (Min) TIP102, TIP107 . Low Collector Emitter Saturation Voltage . The UTC TIP107 is designed for using in general purpose amplifier and switching applications. FEATURES. * Low VCE(SAT). * High Current Gain. Aug 1, 1978 TIP107 . VCEO. -60. -80. -100. V. Emitter-base voltage. VEBO. -5. V. Continuous collector current. IC. -8. A. Peak collector current (see Note 1).
| Part Number | TIP107 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - Bipolar (BJT) - Single |
| Brand | Texas Instruments |
| Description | TRANS PNP DARL 100V 8A TO-220 |
| Series | - |
| Packaging | Tube |
| Transistor Type | PNP - Darlington |
| Current - Collector (Ic) (Max) | 8A |
| Voltage - Collector Emitter Breakdown (Max) | 100V |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 80mA, 8A |
| Current - Collector Cutoff (Max) | 50µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 3A, 4V |
| Power - Max | 2W |
| Frequency - Transition | - |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220AB |
| Image |  |
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