Part Number | TK12A60D(LS1PAV2Q |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET N-CH 600V 12A TO-220SIS |
Series | 蟺-MOSVII |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 38nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1800pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 45W (Tc) |
Rds On (Max) @ Id, Vgs | 550 mOhm @ 6A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220SIS |
Package / Case | TO-220-3 Full Pack |
Image |
TK12A60D
TI/ST
276
0.59
Gallop Great Holdings (Hong Kong) Limited
TK12A60D(STA4.Q.M)
TexasIns
5016
1.1075
EASYIEE TECHNOLOGY LIMITED
TK12A60D
TI/CC
3106
1.625
Hongkong Dasenic Electronic Limited
TK12A60D
TI?
3464
2.1425
Shenzhen WTX Capacitor Co., Ltd.
TK12A60D(LS1PAV2Q
TI-BB
3034
2.66
Pacific Corporation