Part Number | TP2510N8-G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET P-CH 100V 0.48A SOT89-3 |
Series | - |
Packaging | Cut Tape (CT) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 480mA (Tj) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 2.4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | - |
Input Capacitance (Ciss) (Max) @ Vds | 125pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 1.6W (Ta) |
Rds On (Max) @ Id, Vgs | 3.5 Ohm @ 750mA, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-243AA (SOT-89) |
Package / Case | TO-243AA |
Image |
TP2510N8-G
TI/ST
5935
1.13
HK HEQING ELECTRONICS LIMITED
TP2510N8-G
TexasIns
29935
2.2325
MASSTOCK ELECTRONICS LIMITED
TP2510N8-G
TI/CC
360
3.335
Gallop Great Holdings (Hong Kong) Limited
TP2510N8-G
TI?
3750
4.4375
CIS Ltd (CHECK IC SOLUTION LIMITED)
TP2510N8-G
TI-BB
2000
5.54
Nosin (HK) Electronics Co.