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Description
MOSFET 2N-CH 30V .1A SOT-363 Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25~C: 100mA Rds On (Max) @ Id, Vgs: 8 Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.5V @ 100米A Gate Charge (Qg) @ Vgs: - Input Capacitance (Ciss) @ Vds: 13pF @ 5V Power - Max: 150mW Operating Temperature: 150~C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: UMT6
Part Number | UM6K1NTN |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Texas Instruments |
Description | MOSFET 2N-CH 30V .1A SOT-363 |
Series | - |
Packaging | Tape & Reel (TR) |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 100mA |
Rds On (Max) @ Id, Vgs | 8 Ohm @ 10mA, 4V |
Vgs(th) (Max) @ Id | 1.5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | - |
Input Capacitance (Ciss) (Max) @ Vds | 13pF @ 5V |
Power - Max | 150mW |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | UMT6 |
Image | ![]() |
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